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SUM70N03-09CP
Vishay Siliconix
N-Channel 30-V (D-S), 175 _ C MOSFET
FEATURES
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( W )
0.0095 @ V GS = 20 V
30
0.014 @ V GS = 4.5 V
I D (A)
70
58
D TrenchFET r Power MOSFET
D Optimized for High- or Low-Side
D New Low Thermal Resistance Package
D 100% R g Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
TO-263
DRAIN connected to TAB
G
G
D S
Top View
S
Ordering Information: SUM70N03-09CP
SUM70N03-09CP-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T C = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
30
" 20
Unit
V
Continuous Drain Current (T J = 175 _ C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T C = 25 _ C
T C = 125 _ C
L = 0.1 mH
T C = 25 _ C
T A = 25 _ C c
I D
I DM
I AR
E AR
P D
T J , T stg
70
40
100
35
61 b
93
3.75
? 55 to 175
A
mJ
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount c
R thJA
R thJC
40
1.6
_ C/W
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71943
S-32523—Rev. D, 08-Dec-03
www.vishay.com
1
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